Inferring Dislocation Recombination Strength in Multicrystalline Silicon via Etch Pit Geometry Analysis [Elektronisk resurs]

• Dislocations limit solar cell performance bydecreasing minority carrier diffusion length, leading to inefficientcharge collection at the device contacts. However, studieshave shown that the recombination strength of dislocationclusters within millimeters away from each other can vary byorders of magnitude. In this contribution, we present correlations between dislocation microstructure and recombination activity levels which span close to two orders of magnitude. We discuss a general trend observed: higherdislocation recombination activity appears to be correlated witha higher degree of impurity decoration, and a higher degree ofdisorder in the spatial distribution of etch pits. We present anapproach to quantify the degree of disorder of dislocationclusters. Based on our observations, we hypothesize that therecombination activity of different dislocation clusters can bepredicted by visual inspection of the etch pit distribution andgeometry. 

Ämnesord

Engineering and Technology  (hsv)

Electrical Engineering, Electronic Engineering, Information Engineering  (hsv)

Teknik och teknologier  (hsv)

Elektroteknik och elektronik  (hsv)

Natural Sciences  (hsv)

Physical Sciences  (hsv)

Condensed Matter Physics  (hsv)

Naturvetenskap  (hsv)

Fysik  (hsv)

Den kondenserade materiens fysik  (hsv)

Materials Engineering  (hsv)

Materialteknik  (hsv)

Physics  (kau)

Fysik  (kau)

Indexterm och SAB-rubrik

cluster

dislocations

etch pit

multicrystalline

recombination activity

recombination strength

silicon

solar